symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 14.2 20 39 50 r q jc 0.8 1.5 2.5 w t a =70c 1.6 w junction and storage temperature range a p d c 100 50 -55 to 175 t c =100c i d continuous drain current b,g maximum units parameter t c =25c g t c =100c b 30 maximum junction-to-ambient a steady-state 85 63 200 avalanche current c 30 power dissipation a t a =25c p dsm c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 pulsed drain current power dissipation b t c =25c gate-source voltage drain-source voltage maximum junction-to-case c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w a repetitive avalanche energy l=0.1mh c 112 mj aod4132 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 85a (v gs = 10v) r ds(on) < 4m w (v gs = 10v) r ds(on) < 6m w (v gs = 4.5v) 100% uis tested! 100% rg tested! general description the aod4132 uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. this device is ideally suited for use as a low side switch in cpu core power conversion. -rohs compliant -halogen free* g ds g to-252 d-pak top view s bottom view d g s alpha & omega semiconductor, ltd. www.aosmd.com
aod4132 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 85 a 2.8 4 t j =125c 4.4 5.5 4.4 6 m w g fs 106 s v sd 0.72 1 v i s 85 a c iss 3700 4400 pf c oss 700 pf c rss 390 pf r g 0.54 0.7 w q g (10v) 63 76 nc q g (4.5v) 33 40 nc q gs 8.6 nc q gd 17.6 nc t d(on) 12 ns t r 15.5 ns t d(off) 40 ns t f 14 ns t rr 34 41 ns q rr 30 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =15v, i d =20a total gate charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time turn-on delaytime m w v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on steady-state r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board de sign, and the maximum temperature fo 175c may be u sed if the pcb or heatsink allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. it is used to determine the current rating, when this rating falls below the package limit. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by the pac kage current capability. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). rev 1: sep 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aod4132 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 10v 4.0v 0 10 20 30 40 50 60 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 2 3 4 5 6 7 8 0 10 20 30 40 50 60 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 0 2 4 6 8 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c i d =20a alpha & omega semiconductor, ltd. www.aosmd.com
aod4132 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 70 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =20a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =50c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
aod4132 typical electrical and thermal characteristics 0 20 40 60 80 100 120 0.000001 0.00001 0.0001 0.001 0.01 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current t a =150c 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c dd d a v bv i l t - = 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) alpha & omega semiconductor, ltd. www.aosmd.com
aod4132 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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